NPN Transistor. NTE2337 Datasheet

NTE2337 Transistor. Datasheet pdf. Equivalent

Part NTE2337
Description Silicon NPN Transistor
Feature NTE2337 Silicon NPN Transistor High Speed Switch Features: D High Collector–Base Voltage (VCBO) D Wi.
Manufacture NTE
Datasheet
Download NTE2337 Datasheet



NTE2337
NTE2337
Silicon NPN Transistor
High Speed Switch
Features:
D High Collector–Base Voltage (VCBO)
D Wide Area of Safety Operation (ASO)
D Good Linearity of DC Current Gain (hFE)
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Peak Collector Current, ICP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Power Dissipation, PC
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 900V, IE = 0
– – 100 µA
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
– 100 µA
Collector Emitter Voltage
VCEO IC = 10mA, IB = 0
500 – – V
DC Current Gain
hFE1 VCE = 5V, IC = 0.1A
15 – –
hFE2 VCE = 5V, IC = 4A
8––
Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A
– – 1.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A
– – 1.5 V
Transition Frequency
fT VCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz
Turn–On Time
Storage Time
Collector Current Fall Time
ton IC = 4A,
tstg
IB1 = 0.8A, IB2 = –1.6A,
VCC = 200V
tf
– – 1.0 µs
– – 3.0 µs
– – 0.3 µs



NTE2337
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated







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