NPN Transistor. NTE2338 Datasheet

NTE2338 Transistor. Datasheet pdf. Equivalent

Part NTE2338
Description Silicon NPN Transistor
Feature NTE2338 Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode Absolute Maximum.
Manufacture NTE
Datasheet
Download NTE2338 Datasheet



NTE2338
NTE2338
Silicon NPN Transistor
Darlington Power Amp w/Internal
Damper & Zener Diode
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Turn–On Time
Turn–Off Time
V(BR)CBO
V(BR)EBO
ICEO
hFE
VCE(sat)
VBE(sat)
ton
toff
IC = 0.1mA, IE = 0
IE = 50mA, IC = 0
VCE = 50V, RBE =
VCE = 3V, IC = 1A
IC = 1A, IB = 1mA
IC = 1.5A, IB = 1.5mA
IC = 1A, IB = 1mA
IC = 1.5A, IB = 1.5mA
IC = 1A, IB1 = –IB2 = 1mA
Min Typ Max Unit
50 60 70 V
7– – V
– – 10 µA
2000 – 30000
– – 1.5 V
– – 2.0 V
– – 2.0 V
– – 2.5 V
– 0.5 – µs
– 2.0 – µs



NTE2338
Schematic Diagram
C
B
E
.450
(11.4)
Max
.330 (8.38) Max
.175
(4.45)
Max
.655
(16.6)
Max
.118
(3.0)
Dia
ECB
.030 (.762) Dia
.130 (3.3)
Max
.090 (2.28)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)