NPN Transistor. NTE2340 Datasheet

NTE2340 Transistor. Datasheet pdf. Equivalent

Part NTE2340
Description Silicon NPN Transistor
Feature NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built–In Bet.
Manufacture NTE
Datasheet
Download NTE2340 Datasheet




NTE2340
NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Very Small Fluctuation in Breakdown Voltages
D Large Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cut–Off Current
ICBO VCB = 50V, IE = 0
– – 100 µA
Emitter Cut–Off Current
IEBO VEB = 7V, IC = 0
– – 2 mA
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0
50 – 70 V
DC Current Gain
hFE (1) VCE = 3V, IC = 4A
2000 – 5000
hFE (2) VCE = 3V, IC = 8A
500 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 8mA
– – 1.5 V
Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 8mA
– – 2.0 V
Transition Frequency
fT VCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz
Turn–On Time
Storage Time
ton VCC = 50V, IB1 = –IB2 = 8mA,
tstg IC = 4A
– 0.5 – µs
– 4.0 – µs
Fall Time
tf
– 1.0 – µs
Energy Handling Capability
Es/b IC = 1A, L = 100mH,
RBE = 100
50 – – mJ



NTE2340
C
B
E
.343 (8.72)
.059 (1.5)
.406
(10.3)
.413
(10.5)
.100 (2.54)
.148 (3.72)
.256 (6.5)
.043 (1.1)
.043 (1.1)
.032 (0.82)
.020 (.508)
BC E







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