NPN Transistor. NTE2348 Datasheet

NTE2348 Transistor. Datasheet pdf. Equivalent

Part NTE2348
Description Silicon NPN Transistor
Feature NTE2348 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, H.
Manufacture NTE
Datasheet
Download NTE2348 Datasheet




NTE2348
NTE2348
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area
Absolute Maximum ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width 300µs, Duty Cycle 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO
IEBO
hFE (1)
hFE (2)
fT
Cob
VCE(sat)
VBE(sat)
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 800mA
VCE = 5V, IC = 4A
VCE = 10V, IC 800mA
VCB = 10V, f = 1MHz
IC = 6A, IB = 1.2mA
IC = 6A, IB = 1.2mA
Min Typ Max Unit
– – 10 µA
– – 10 µA
10 – –
8––
– 15 – MHz
– 215 – pF
– – 2.0 V
– – 1.5 V



NTE2348
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE =
EmitterBase Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0
CollectorEmitter Sustaining Voltage VCEX(sus) IC = 6A, IB1 = IB2 = 1.2mA,
L = 2mH, Clamped
1100 – – V
800 – – V
7––V
800 – – V
TurnOn Time
Storage Time
Fall Time
ton VCC = 400V, IB1 = 2.5A,
tstg IB2 =IC = 8A, RL = 50
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
C
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)