NPN Transistor. NTE2354 Datasheet

NTE2354 Transistor. Datasheet pdf. Equivalent

Part NTE2354
Description Silicon NPN Transistor
Feature NTE2354 Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT Applications: .
Manufacture NTE
Datasheet
Download NTE2354 Datasheet



NTE2354
NTE2354
Silicon NPN Transistor
High Voltage Horizontal Output for High Definition CRT
Applications:
D High–definition color display horizontal deflection output
Features:
D Fast speed: tf = 100ns Typ
D High breakdown voltage: VCBO = 1500V
D High reliability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–to–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Collector Current, icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Saturation Voltage
Collector–to–Emitter
ICES
VCEO(sus)
IEBO
VCE(sat)
VCE = 1500V, RBE = 0
IC = 100mA, IB = 0
VEB = 4V, IC = 0
IC = 8A, IB = 2.0A
– – 1.0 mA
800 – – V
– – 1.0 mA
– – 5.0 V
Saturation Voltage
Base–to–Emitter
VBE(sat) IC = 8A, IB = 2.0A
– – 1.5 V
DC Current Gain
Storage Time
Fall Time
hFE VCE = 5V, IC = 1.0A
8–––
tstg IC = 6A, IB1 = 1.2A, IB2 = –2.4A – – 3.0 µs
tf IC = 6A, IB1 = 1.2A, IB2 = –2.4A – 0.1 0.2 µs



NTE2354
.190 (4.82)
.787
(20.0)
.615 (15.62)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B CE
.215 (5.47)







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