PNP Transistor. NTE2366 Datasheet

NTE2366 Transistor. Datasheet pdf. Equivalent

Part NTE2366
Description Silicon PNP Transistor
Feature NTE2366 Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399) Absolute Maximum Ratings: (T.
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Datasheet
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NTE2366
NTE2366
Silicon PNP Transistor
High Voltage Video Amp
(Compl to NTE399)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Capacitance
Reverse Transfer Capacitance
ICBO VCB = 200V, IE = 0
IEBO VEB = 4V, IC = 0
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
hFE VCE = 10V, IC = 10mA
VCE(sat) IC = 20mA, IB = 2mA
VBE(sat) IC = 20mA, IB = 2mA
fT VCE = 30V, IC = 10mA
Cob VCB = 30V, f = 1MHz
Cre VCB = 30V, f = 1MHz
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
300 – – V
300 – – V
5––V
40 – 320
– – 0.6 V
– – 1.0 V
– 150 – MHz
– 2.6 – pF
– 1.8 – pF



NTE2366
.339
(8.62)
Max
.512
(13.0)
Min
Seating Plane
.026 (.66)
Dia Max
ECB
.100 (2.54)
.240 (6.09) Max
.200
(5.08)
Max







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