Gate MOSFET. NTE2380 Datasheet

NTE2380 MOSFET. Datasheet pdf. Equivalent

Part NTE2380
Description Complementary Silicon Gate MOSFET
Feature NTE2380 (N–Ch) & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Swit.
Manufacture NTE
Datasheet
Download NTE2380 Datasheet




NTE2380
NTE2380 (N–Ch) & NTE2381 (P–Ch)
Complementary Silicon Gate MOSFETs
Enhancement Mode, High Speed Switch
Description:
The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type
package designed for high voltage, high speed power switching applications such as switching regu-
lators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximim Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain–Gate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Pulsed
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25°C), PD
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Temperature Range, Topr
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C



NTE2380
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
NTE2380
NTE2381
V(BR)DSS VGS = 0, ID = 0.25mA
IDSS
VDS = 500V, VGS = 0
500 – – V
– – 0.25 mA
– – 0.2 mA
NTE2380 & NTE2381
GateBody Leakage Current, Forward
NTE2380
NTE2381
IGSSF
VDS = 400V, VGS = 0, TJ = +125°C
VGSF = 20V, VDS = 0
1.0 mA
500 nA
100 nA
GateBody Leakage Current, Reverse
NTE2380
NTE2381
IGSSR
VGSF = 20V, VDS = 0
– – 500 nA
– – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
NTE2380
NTE2381
Static DrainSource OnResistance
NTE2380
NTE2381
Forward Transconductance
NTE2380
NTE2381
Dynamic Characteristics
VGS(th)
rDS(on)
VDS = VGS
ID = 0.25mA
ID = 1mA
VGS = 10V, ID = 1A
gFS
ID = 1A
VDS 7.5V
VDS = 15V
2.0 4.0 V
2.0 4.5 V
– – 3
– – 6
1
0.5
mhos
mhos
Input Capacitance
NTE2380
NTE2381
Ciss
VDS = 25V, VGS = 0, f = 1MHz
– – 400 pF
– – 100 pF
Output Capacitance
NTE2380
NTE2381
Coss
– – 150 pF
– – 200 pF
Reverse Transfer Capacitance
NTE2380
Crss
– – 40 pF
NTE2381
– – 80 pF
Switching Characteristics (Note 1)
TurnOn Time
NTE2380
NTE2381
Rise Time
NTE2380
NTE2381
TurnOff Time
NTE2380
NTE2381
Fall Time
NTE2380
NTE2381
td(on)
ID = 1A,
Rgen = 50
tr
td(off)
tf
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
– – 60 ns
– – 50 ns
– – 50 ns
– – 100 ns
– – 60 ns
– – 150 ns
– – 30 ns
– – 50 ns
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.







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