N-CHANNEL MOSFET. NTE2388 Datasheet

NTE2388 MOSFET. Datasheet pdf. Equivalent

Part NTE2388
Description N-CHANNEL MOSFET
Feature NTE2388 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N–Channe.
Manufacture NTE
Datasheet
Download NTE2388 Datasheet



NTE2388
NTE2388
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Low rDS(on) to Minimize On–Losses. Specified at Elevated Temperatures.
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximum Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Drain–Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A
Peak
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C
Maximum Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Maximum Lead Temperature (During soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . +300°C



NTE2388
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
DrainSource Breakdown Voltage V(BR)DSS ID = 250µA, VGS = 0
200 – – V
ZeroGate Voltage Drain Current
IDSS VGS = 0, VDS = Max Rating – – 200 µA
VGS = 0, VDS = 160V,
TC = +125°C
– – 1000 µA
GateBody Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V
– – 100 nA
GateBody Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V
– – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
Static DrainSource On Resistance
OnState Drain Current
Forward Transconductance
Dynamic Characteristics
VGS(th)
RDS(on)
ID(on)
gfs
VDS = VGS, ID = 250µA
VGS = 10V, ID = 10A
VGS = 10V, VDS 3.2V
VDS 3.2V, ID = 10A
24V
– – 0.18
18 – – A
6 – – mhos
Input Capactiance
Output Capacitance
Ciss
Coss
VDS = 25V, VGS = 0,
f = 1MHz
Reverse Transfer Capactiance
Crss
Switching Characteristics (Note 1)
– – 1600 pf
– – 750 pf
– – 300 pf
TurnOn Time
Rise Time
td(on)
tr
VDD [ 75V, ID = 10APEAK,
Rg = 4.7
TurnOff Delay Time
td(off)
Fall Time
tf
Total Gate Charge
GateSource Charge
Qg VDS = 160V, VGS = 10V,
Qgs ID = Rated ID
GateDrain Charge
Qgd
Source Drain Diode Characteristics (Note 1)
– – 30 ns
– – 60 ns
– – 80 ns
– – 60 ns
38 60 nC
16 nC
22 nC
Forward ON Voltage
Forward TurnOn Time
Reverse Recovery Time
Internal Package Inductance
VSD IS = Rated ID, VGS = 0
ton
trr
1.8 2.0 V
Limited by stray inductance
450 ns
Internal Drain Inductance
Ld Measured from the contact 3.5 nH
screw on tab to center of die
Measured from the drain lead 4.5 nH
0.25from package to center
of die
Internal Source Inductance
Ls Measured from the source 7.5 nH
lead 0.25from package to
source bond pad
Note 1. Pulse test: Pulse width 300µs, Duty cycle 2%.







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