N-CHANNEL MOSFET. NTE2389 Datasheet

NTE2389 MOSFET. Datasheet pdf. Equivalent

Part NTE2389
Description N-CHANNEL MOSFET
Feature NTE2389 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: (TA = +25°C unless.
Manufacture NTE
Datasheet
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NTE2389
NTE2389
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Ratings
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Drain–Source On–State Resistance
Dynamic Ratings
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
ID = 0.25mA, VGS = 0
ID = 1mA, VDS = VGS
VDS = 60V,
VGS = 0
TJ = +25°C
TJ = +125°C
VGS = ±30V, VDS = 0
ID = 20A, VGS = 10V
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Ciss
Coss
Crss
ID = 20A, VDS = 25V
VDS = 25V, VGS = 0, f = 1MHz
Min Typ Max Unit
60 – – V
2.1 3.0 4.0 V
– 1 10 µA
– 0.1 1.0 mA
– 10 100 nA
– 40 45 m
8 13.5 – mhos
– 1650 2000 pF
– 560 750 pF
– 300 400 pF



NTE2389
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Ratings (Contd)
TurnOn Time
TurnOff Time
Internal Drain Inductance
td (on)
tr
td (off)
tf
Ld
VCC = 30V, VGS = 10V,
ID = 3A, RGS = 50
Measured from contact screw
on tab to center of die
25 40 ns
60 90 ns
125 160 ns
100 130 ns
3.5 nH
Measured from drain lead 6mm
from package to center of die
4.5
nH
Internal Source Inductance
Ls Measured from source lead
6mm from package to source
bond pad
7.5 nH
Reverse Diode
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward OnVoltage
Reverse Recovery Time
Reverse Recovery Charge
IDR
IDRM
VSD
trr
Qrr
IF = 41A, VGS = 0
IF = 41A, VGS = 0, VR = 30V
diF/dt = 100A/µs
– – 41 A
– – 164 A
1.4 2.0 V
60 ns
0.3 µC
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab







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