N-CHANNEL MOSFET. NTE2396 Datasheet

NTE2396 MOSFET. Datasheet pdf. Equivalent

Part NTE2396
Description N-CHANNEL MOSFET
Feature NTE2396 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitiv.
Manufacture NTE
Datasheet
Download NTE2396 Datasheet




NTE2396
NTE2396
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Current Sense
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 25V, starting TJ = +25°C, L = 191µH, RG = 25, IAS = 28A
Note 3. ISD 28A, di/dt 170A/µs, VDD V(BR)DSS, TJ +175°C



NTE2396
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DraintoSource Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static DraintoSource OnResistance
Gate Threshold Voltage
V(BR)DSS
V(BR)DSS
TJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 17A, Note 4
VDS = VGS, ID = 250µA
100 – – V
0.13 V/°C
– – 0.077
2.0 4.0 V
Forward Transconductance
DraintoSource Leakage Current
GatetoSource Forward Leakage
GatetoSource Reverse Leakage
gfs
IDSS
IGSS
IGSS
VDS = 50V, ID = 17A, Note 4
5.8 – – mhos
VDS = 100V, VGS = 0V
– – 25 µA
VDS = 80V, VGS = 0V, TJ = +150°C – – 250 µA
VGS = 20V
– – 100 nA
VGS = 20V
– – –100 nA
Total Gate Charge
GatetoSource Charge
GatetoDrain (Miller) Charge
TurnOn Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
ID = 29A, VDS = 80V, VGS = 10V,
Note 4
VDD = 50V, ID = 29A, RG = 9.1,
RD = 1.7, Note 4
– – 69 nC
– – 13 nC
– – 37 nC
13 ns
77 ns
TurnOff Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
tf
LD
LS
Between lead, .250in. (6.0) mm from
package and center of die contact
40
48
4.5
7.5
ns
ns
nH
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1300
630
130
pF
pF
pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 1
VSD TJ = +25°C, IS = 28A, VGS = 0V,
Note 4
– – 28 A
– – 110 A
– – 2.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 29A,
Qrr di/dt = 100A/µs, Note 4
120 260 ns
0.52 1.2 µC
Forward TurnOn Time
ton Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width 300µs; duty cycle 2%.







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