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SSM3K01T

Toshiba Semiconductor

Silicon N-Channel MOSFET


Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T SSM3K01T High Speed Switching Applications Unit: mm Small Package Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics ...



Toshiba Semiconductor

SSM3K01T

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