TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
SSM3K01T
High Speed Switching Applications
Unit: mm
Small Package Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V)
: Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V
(@VDS = 3 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
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