N-Channel MOSFET. 2SK3569 Datasheet

2SK3569 MOSFET. Datasheet pdf. Equivalent

2SK3569 Datasheet
Recommendation 2SK3569 Datasheet
Part 2SK3569
Description N-Channel MOSFET
Feature 2SK3569; 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regu.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3569 Datasheet





Toshiba Semiconductor 2SK3569
2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3569
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.54 (typ.)
High forward transfer admittance: |Yfs| = 8.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
V
600
V
±30
V
10
A
40
45
W
363
mJ
10
A
4.5
mJ
150
°C
-55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
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Toshiba Semiconductor 2SK3569
2SK3569
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
V
IDSS
VDS = 600 V, VGS = 0 V
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
600
V
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
RDS (ON) VGS = 10 V, ID = 5 A
0.54 0.75 Ω
Yfs
VDS = 10 V, ID = 5 A
2.4 8.5
S
Ciss
1500
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
15
pF
Coss
180
tr
10 V
VGS
ID = 5 A VOUT
22
0V
ton
50 Ω
RL =
40 Ω
50
ns
tf
36
VDD 200 V
toff
Duty 1%, tw = 10 μs
180
Qg
Qgs
VDD 400 V, VGS = 10 V, ID = 10 A
Qgd
42
23
nC
19
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
10
A
40
A
1.7
V
1300
ns
16
μC
Marking
K3569
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
Part No. (or abbreviation code)
Lot No.
environmental matters such
as the
RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
Note 4
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-01-29



Toshiba Semiconductor 2SK3569
ID – VDS
10
COMMON SOURCE
6
Tc = 25°C
PULSE TEST
8
10,8
6
4
2
5.3
5.1
5
4.8
4.6
4.4
4.2
VGS = 4V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
2SK3569
ID – VDS
20
10
8
COMMON SOURCE
6
Tc = 25°C
PULSE TEST
16
5.5
5.25
12
5
8
4.75
4.5
4
VGS = 4 V
0
0
10
20
30
40
DRAIN-SOURCE VOLTAGE VDS
50
(V)
ID – VGS
20
COMMON SOURCE
16 VDS = 20 V
PULSE TEST
12
8
Tc = −55°C
100
4
25
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
VDS – VGS
10
COMMON SOURCE
Tc = 25
8
PULSE TEST
6
ID = 10 A
4
5
2
2.5
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
Yfs– ID
100
10
1
0.1
0.1
Tc = −55°C
25
100
COMMON SOURCE
VDS = 20 V
PULSE TEST
1
10
100
DRAIN CURRENT ID (A)
RDS (ON) – ID
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
VGS = 10 V15V
0.1
0.1
1
10
100
DRAIN CURRENT ID (A)
3
2010-01-29





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