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2SK3569 Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part 2SK3569
Description N-Channel MOSFET
Feature 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc.
Manufacture Toshiba Semiconductor
Datasheet
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Part 2SK3569
Description N-Channel MOSFET
Feature 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc.
Manufacture Toshiba Semiconductor
Datasheet
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2SK3569

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