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2SK3569 Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part 2SK3569
Description N-Channel MOSFET
Feature 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2 SK3569 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 0.
54 Ω (typ.
)
• High forw ard transfer admittance: |Yfs| = 8.
5 S (typ.
)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhance ment mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maxi mum Ratings (Ta = 25°C) Characteristi cs Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 k Ω) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3569 Datasheet
Part 2SK3569
Description N-Channel MOSFET
Feature 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2 SK3569 Switching Regulator Application s
• Low drain-source ON-resistance: R DS (ON) = 0.
54 Ω (typ.
)
• High forw ard transfer admittance: |Yfs| = 8.
5 S (typ.
)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhance ment mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maxi mum Ratings (Ta = 25°C) Characteristi cs Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 k Ω) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3569 Datasheet

2SK3569

2SK3569
2SK3569

2SK3569

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