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2SK3569 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | 2SK3569 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3569
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc. |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | 2SK3569 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3569
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc. |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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