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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz Broadband internally matched Hermetically sealed package RF Performance Specifications (Ta = 25°C)
Characteristic Output Power at 1dB Compr...