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TIM1414-4A

Toshiba
Part Number TIM1414-4A
Manufacturer Toshiba
Description Microwave Power GaAs FET
Published Jul 30, 2006
Detailed Description com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High po...
Datasheet PDF File TIM1414-4A PDF File

TIM1414-4A
TIM1414-4A

Overview
com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB = 36.
5 dBm at 14.
0 GHz to 14.
5 GHz • High gain - G1dB = 6.
5 dB at 14.
0 GHz to 14.
5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.
0 ~ 14.
5 GHz Condition Unit dBm dB A % °C Min.
36.
0 6.
0 – – – Typ.
36.
5 6.
5 1.
7 23 – Max – – 2.
2 – 70 TIM1414-4A DataShee Electrical Characteristics (Ta = 2...


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