P-Channel Enhancement Mode Field Effect Transistor
Description
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-40V, -4.6A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8
CEM4481
D 7
D 6
D 5
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RA...
