Encapsulated Device. AOP605L Datasheet

AOP605L Device. Datasheet pdf. Equivalent

Part AOP605L
Description Plastic Encapsulated Device
Feature AOS Semiconductor Product Reliability Report AOP605/AOP605L, Plastic Encapsulated Device rev B AL.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOP605L Datasheet



AOP605L
AOS Semiconductor
Product Reliability Report
AOP605/AOP605L, rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Apr 4, 2006
1



AOP605L
This AOS product reliability report summarizes the qualification result for AOP605. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOP605passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I. Product Description
II. Package and Die information
III. Environmental Stress Test Summary and Result
IV. Reliability Evaluation
V. Quality Assurance Information
I. Product Description:
The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of
applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications).
AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
VDS
30
Max p-channel
-30
Units
V
Gate-Source Voltage
VGS
±20
±20 V
Continuous
Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
ID
IDM
7.5
6
30
-6.6
-5.3
-30 A
Power
Dissipation
TA=25°C
TA=70°C
Junction and Storage
Temperature Range
PD
TJ, TSTG
2.5
1.6
-55 to 150
2.5
1.6
-55 to 150
W
°C
Thermal Characteristics : n-channel, Schottky and p-channel
Parameter
Symbol Device Typ
Maximum Junction-
to-Ambient
Maximum Junction-
to-Ambient
Maximum Junction-
to-Lead
Maximum Junction-
to-Ambient
Maximum Junction-
to-Ambient
Maximum Junction-
to-Lead
t 10s
Steady-
State
Steady-
State
t 10s
Steady-
State
Steady-
State
RθJA
RθJL
RθJA
RθJL
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
40
67
33
38
66
30
Max
50
80
40
50
80
40
Units
°C/W
2





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