(Datasheet) 2SK3562 data sheet PDF





2SK3562 Datasheet, Field Effect Transistor Silicon N Channel MOS Type

2SK3562   2SK3562  

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DataSheet.in 2SK3562 TOSHIBA Field Effe ct Transistor Silicon N Channel MOS Typ e (π-MOSVI) 2SK3562 Switching Regulat or Applications • • • • Low dra in-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admitta nce: |Yfs| = 5.0S (typ.) Low leakage cu rrent: IDSS = 100 μA (VDS = 600 V) Enh ancement mode: Vth = 2.0~4.0 V (VDS = 1 0 V, ID = 1 mA) Unit: mm Maximum Ratin

2SK3562 Datasheet, Field Effect Transistor Silicon N Channel MOS Type

2SK3562   2SK3562  
gs (Ta = 25°C) Characteristics Drain-so urce voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain c urrent (Note 1) Symbol VDSS VDGR VGSS I D IDP PD EAS IAR EAR Tch Tstg Rating 60 0 600 ±30 6 24 40 345 6 4 150 -55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) ( Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energ








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