2SK3557 Datasheet: N-Channel Junction Silicon FET





2SK3557 N-Channel Junction Silicon FET Datasheet

Part Number 2SK3557
Description N-Channel Junction Silicon FET
Manufacture Sanyo Semicon
Total Page 4 Pages
PDF Download Download 2SK3557 Datasheet PDF

Features: www.DataSheet4U.com Ordering number : E NN7169 2SK3557 N-Channel Junction Sili con FET 2SK3557 Low-Noise HF Amplifier Applications Preliminary Applications • • Package Dimensions unit : mm 2 050A [2SK3557] AM tuner RF amplifier. Low noise amplifier. Features 0.5 • • • • Large yfs. Small Ci ss. Ultrasmall-sized package permitting 2SK3557applied sets to be made smaller and slimer. Ultralow noise figure. 0. 4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2 .9 0.5 1.5 2.5 0.8 1.1 1 : Source 2 : Drain 3 : Gate SANYO : CP Specificat ions Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Ga te-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Jun ction Temperature Storage Temperature S ymbol VDSX VGDS IG ID PD Tj Tstg Condit ions Ratings 15 -15 10 50 200 150 --55 to +150 Unit V V mA mA mW °C °C Elec trical Characteristics at Ta=25°C Para meter Gate-to-Drain Breakdown Voltage G ate Cutoff Current Cutoff Voltage Symbol V(BR)GDS IGSS VGS(off) Conditions IG=-10µA.

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www.DataSheet4U.com
Ordering number : ENN7169
2SK3557
N-Channel Junction Silicon FET
2SK3557
Low-Noise HF Amplifier Applications
Preliminary
Applications
AM tuner RF amplifier.
Low noise amplifier.
Features
Large yfs.
Small Ciss.
Ultrasmall-sized package permitting 2SK3557-
applied sets to be made smaller and slimer.
Ultralow noise figure.
Package Dimensions
unit : mm
2050A
[2SK3557]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Source
2 : Drain
3 : Gate
SANYO : CP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Marking : IR
Symbol
Conditions
V(BR)GDS
IGSS
VGS(off)
IG=--10µA, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100µA
Ratings
15
--15
10
50
200
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
min
--15
--0.3
Ratings
typ
max
Unit
V
--1.0 nA
--0.7 --1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60502 TS IM TA-3622 No.7169-1/4

           






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