Silicon Transistor. 2SC5808 Datasheet

2SC5808 Transistor. Datasheet pdf. Equivalent


Part 2SC5808
Description NPN Triple Diffused Planar Silicon Transistor
Feature www.DataSheet4U.com Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SC5808 Datasheet


www.DataSheet4U.com Ordering number : ENN7079 2SC5808 NPN T 2SC5808 Datasheet
Recommendation Recommendation Datasheet 2SC5808 Datasheet




2SC5808
www.DataSheet4U.com
Ordering number : ENN7079
Features
High breakdown voltage.
High speed switching.
Wide ASO.
Adoption of MBIT process.
2SC5808
NPN Triple Diffused Planar Silicon Transistor
2SC5808
Switching Power Supply Applications
Package Dimensions
unit : mm
2045B
[2SC5808]
6.5
5.0 2.3
4 0.5
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5 1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
Package Dimensions
unit : mm
2044B
[2SC5808]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2501 TS IM TA-3412 No.7079-1/4



2SC5808
www.DataSheet4U.com
2SC5808
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW300µs, duty cycle10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE3
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.3A
VCE=5V, IC=1.2A
VCE=5V, IC=1mA
VCE=10V, IC=0.3A
VCB=10V, f=1MHz
IC=1.2A, IB=0.24A
IC=1.2A, IB=0.24A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133
VCC=200V, IC=1.5A, IB1=0.3A,
IB2=--0.6A, RL=133
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
Ratings
700
700
400
8
2.5
5
1.2
1
15
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Ratings
min typ
20
10
10
20
20
700
400
8
max
10
10
50
0.8
1.5
0.5
Unit
µA
µA
MHz
pF
V
V
V
V
V
µs
2.5 µs
0.25 µs
No.7079-2/4







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