2SC6077 Datasheet PDF Download, Toshiba Semiconductor





(PDF) 2SC6077 Datasheet Download

Part Number 2SC6077
Description Silicon NPN Epitaxial Type Transistor
Manufacture Toshiba Semiconductor
Total Page 5 Pages
PDF Download Download 2SC6077 Datasheet PDF

Features: 2SC6077 TOSHIBA Transistor Silicon NPN E pitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications ○ Powe r Switching Applications • • Low co llector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed sw itching: tstg = 0.4 μs (typ) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Sym bol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 9 3.0 5.0 1.0 1.8 150 −55~150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTO R(HEAT SINK) 3 : EMITTER Collector -base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipati on Junction temperature Storage tempera ture range JEDEC JEITA TOSHIBA Weight: 1.5g(typ) - - 2-10T1A Electrical Characteristics (Ta = 25°C) Character istic Collector cut-off current Emitter cut-off current Collector-emitter brea kdown voltage Symbol ICBO IEBO V (BR) C EO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter.

Keywords: 2SC6077, datasheet, pdf, Toshiba Semiconductor, Silicon, NPN, Epitaxial, Type, Transistor, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6077
Power Amplifier Applications
Power Switching Applications
2SC6077
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
www.DataSheetA4Ub.csomolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics (Ta = 25°C)
Rating
160
160
80
9
3.0
5.0
1.0
1.8
150
55150
Unit
V
V
V
V
A
A
A
W
°C
°C
1 : BASE
2 : COLLECTORHEAT SINK
3 : EMITTER
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight:1.5g(typ)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
fT
VCB = 160 V, IE = 0
VEB = 9 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 50 mA
IC = 1 A, IB = 100 mA
IC = 1 A, IB = 100 mA
VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0,f = 1MHZ
tr
20 μs
Input IB1
Output
tstg IB2
VCC = 24 V
tf IB1 = −IB2 = 100 mA
Duty cycle 1%
Min Typ. Max Unit
- - 1.0 uA
- - 1.0 uA
80 - -
V
150
180 450
100
- - 0.3 V
- - 0.5 V
- - 1.5 V
150 MHZ
14 pF
0.05
0.4
us
0.15
1 2006-10-20

              






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)