TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6077
○ Power Amplifier Applications
○ Power Switching Applications
2SC6077
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A）
• High-speed switching: tstg = 0.4 μs (typ)
www.DataSheetA4Ub.csomolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics (Ta = 25°C)
Rating
160
160
80
9
3.0
5.0
1.0
1.8
150
−55～150
Unit
V
V
V
V
A
A
A
W
°C
°C
1 : BASE
2 : COLLECTOR（HEAT SINK）
3 : EMITTER
JEDEC
－
JEITA
－
TOSHIBA
2-10T1A
Weight:1.5g(typ)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Fall time
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
fT
VCB = 160 V, IE = 0
VEB = 9 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 50 mA
IC = 1 A, IB = 100 mA
IC = 1 A, IB = 100 mA
VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0,f = 1MHZ
tr
20 μs
Input IB1
Output
tstg IB2
VCC = 24 V
tf IB1 = −IB2 = 100 mA
Duty cycle ≦1%
Min Typ. Max Unit
－ － 1.0 uA
－ － 1.0 uA
80 － －
V
150 －
－
180 － 450
100 －
－
－ － 0.3 V
－ － 0.5 V
－ － 1.5 V
－ 150 － MHZ
－ 14 － pF
－ 0.05 －
－ 0.4 －
us
－ 0.15 －
1 2006-10-20
