2SC6078 Datasheet PDF Download, Toshiba Semiconductor





(PDF) 2SC6078 Datasheet Download

Part Number 2SC6078
Description Silicon NPN Epitaxial Type Transistor
Manufacture Toshiba Semiconductor
Total Page 5 Pages
PDF Download Download 2SC6078 Datasheet PDF

Features: 2SC6078 TOSHIBA Transistor Silicon NPN E pitaxial Type (PCT Process) 2SC6078 Power Amplifier Applications ○ Powe r Switching Applications • • Low co llector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed sw itching: tstg = 0.4 μs (typ) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Sym bol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 7 3 5 1.0 1.8 150 −55~150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR( HEAT SINK) 3 : EMITTER Collector-bas e voltage Collector-emitter voltage Emi tter-base voltage Collector current Bas e current Collector power dissipation J unction temperature Storage temperature range JEDEC JEITA TOSHIBA - - 2 -10T1A Weight:1.5g(typ) Note: Using co ntinuously under heavy loads (e.g. the application of high temperature/current /voltage and the significant change in temperature, etc.) may cause this produ ct to decrease in the reliability significantly even if the operating conditions (i.e. oper.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6078
Power Amplifier Applications
Power Switching Applications
2SC6078
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
www.DataSheetA4Ub.csomolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
160
160
80
7
3
5
1.0
1.8
150
55150
V
V
V
V
A
A
A
W
°C
°C
1 : BASE
2 : COLLECTORHEAT SINK
3 : EMITTER
JEDEC
JEITA
TOSHIBA
2-10T1A
Note: Using continuously under heavy loads (e.g. the application of
Weight:1.5g(typ)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-16

              






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