2SC6079 Datasheet PDF Download, Toshiba Semiconductor





(PDF) 2SC6079 Datasheet Download

Part Number 2SC6079
Description Silicon NPN Epitaxial Type Transistor
Manufacture Toshiba Semiconductor
Total Page 5 Pages
PDF Download Download 2SC6079 Datasheet PDF

Features: 2SC6079 TOSHIBA Transistor Silicon NPN E pitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applicatio ns Low collector saturation voltage: VC E (sat) = 0.5 V (max)(IC = 1A) High -speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Character istic Collector-base voltage Collector- emitter voltage Collector-emitter volta ge Emitter-base voltage Collector curre nt Base current Collector power dissipa tion Junction temperature Storage tempe rature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 1 60 160 80 9 2.0 4.0 1.5 1 150 −55~1 50 Unit V V V V A A A W °C °C 1 : BAS E 2 : COLLECTOR 3 : EMITTER JEDEC JEIT A TOSHIBA Weight:0.2g(typ) ― ― 2-7 D101A Note: Using continuously under h eavy loads (e.g. the application of hig h temperature/current/voltage and the s ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating .

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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6079
Power Amplifier Applications
Power Switching Applications
2SC6079
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A
High-speed switching: tstg = 0.4 μs (typ)
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
160
160
80
9
2.0
4.0
1.5
1
150
55150
Unit
V
V
V
V
A
A
A
W
°C
°C
1 : BASE
2 : COLLECTOR
3 : EMITTER
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight:0.2g(typ)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2007-06-07

              






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