MOS FET. 2SK2390 Datasheet

2SK2390 FET. Datasheet pdf. Equivalent

Part 2SK2390
Description Silicon N-Channel MOS FET
Feature www.DataSheet4U.com 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power s.
Manufacture Hitachi Semiconductor
Datasheet
Download 2SK2390 Datasheet



2SK2390
www.DataSheet4U.com
2SK2390
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-220CFM
November 1996
D 12 3
1. Gate
G 2. Drain
3. Source
S



2SK2390
www.DataSheet4U.com
2SK2390
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
3. Value at Tch = 25 °C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
60
±20
12
48
12
12
12
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2







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