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MOS FET. 2SK2390 Datasheet

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MOS FET. 2SK2390 Datasheet
















2SK2390 FET. Datasheet pdf. Equivalent













Part

2SK2390

Description

Silicon N-Channel MOS FET



Feature


www.DataSheet4U.com 2SK2390 Silicon N-C hannel MOS FET November 1996 Applicati on High speed power switching Features • • • • • • Low on-resista nce High speed switching Low drive curr ent 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche r atings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SK2390 Datasheet


Hitachi Semiconductor 2SK2390

2SK2390; www.DataSheet4U.com 2SK2390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volta ge Drain current Drain peak current Bod y to drain diode reverse drain current Avalanche current Avalanche energy Chan nel dissipation Channel temperature Sto rage temperature Notes 1. PW ≤ 10 µs , duty cycle ≤ 1 % 2. Value at Tc = 2 5 °C 3. Value at Tch = 2.


Hitachi Semiconductor 2SK2390

5 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings 60 ± 20 12 48 12 12 Unit V V A A A A mJ W C °C EAR* Tch 3 12 2 Pch* 20 150 –55 to +150 Tstg 2 www.DataSheet4 U.com 2SK2390 Electrical Characteristi cs (Ta = 25°C) Item Drain to source br eakdown voltage Gate to source breakdow n voltage Gate to source leak current S ymbol V(BR)DSS V(BR)GSS IGSS .


Hitachi Semiconductor 2SK2390

VGS(off) Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capa citance Output capacitance Reverse tran sfer capacitance Turn-on delay time Ris e time Turn-off delay time Fall time Bo dy to drain diode forward voltage Body to drain diode reverse recovery time No te 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr td(off) tf VDF trr 4 — — — — — — — — Typ — — — — — 0.07.





Part

2SK2390

Description

Silicon N-Channel MOS FET



Feature


www.DataSheet4U.com 2SK2390 Silicon N-C hannel MOS FET November 1996 Applicati on High speed power switching Features • • • • • • Low on-resista nce High speed switching Low drive curr ent 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche r atings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SK2390 Datasheet




 2SK2390
www.DataSheet4U.com
2SK2390
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-220CFM
November 1996
D 12 3
1. Gate
G 2. Drain
3. Source
S




 2SK2390
www.DataSheet4U.com
2SK2390
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
3. Value at Tch = 25 °C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
60
±20
12
48
12
12
12
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2




 2SK2390
www.DataSheet4U.com
2SK2390
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Typ Max
——
——
0.075
±10
250
2.25
0.09
0.11 0.15
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
td(on)
tr
td(off)
tf
VDF
Body to drain diode reverse
recovery time
trr
Note 1. Pulse Test
4
8—
450 —
240 —
60 —
10 —
55 —
100 —
70 —
1.05 —
95 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 6 A
VGS = 10 V*1
ID = 6 A
VGS = 4 V*1
ID = 6 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 6 A
VGS = 10 V
RL = 5
IF = 12 A, VGS = 0
IF = 12 A, VGS = 0,
diF / dt = 50 A / µs
3




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