Power MOSFET. KRF7507 Datasheet

KRF7507 MOSFET. Datasheet pdf. Equivalent

Part KRF7507
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7507 Features Generation V Technology Ultra Low On-Resistance Dual N.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7507 Datasheet




KRF7507
SMD Type
HEXFET Power MOSFET
KRF7507
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current VGS Ta = 25
ID
Continuous Drain Current VGS Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Gate-to-Source Voltage Single Pulse tp<10 S
VGSM
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient*3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
20 -20
2.4 -1.7
1.9 -1.4
21 -14
1.25
0.8
10
12
16
5.0 -5.0
-55 to + 150
100
*2 N-Channel ISD 1.7A, di/dt 100A/ s, VDD
P-Channel ISD -1.2A, di/dt 50A/ s, VDD
*3 Surface mounted on FR-4 board, t 10sec.
V(BR)DSS, TJ
V(BR)DSS, TJ
150
150
Unit
V
A
W
mW/
V
V
V/ ns
/W
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KRF7507
SMD Type
ICIC
Electrical Characteristics TJ = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
VGS = 4.5V, ID = 1.7A*1
RDS(on)
VGS = 2.7V, ID = 0.85A*1
VGS = -4.5V, ID = -1.2A*1
VGS = -2.7V, ID = -0.6A*1
VGS(th)
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS =10V, ID = 0.85A*1
gfs
VDS = -10V, ID = -0.6A*1
VDS = 16V, VGS = 0V
IDSS
VDS = -16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125
VDS = -16V, VGS = 0V, TJ = 125
IGSS VGS = 12V
N-Channel
Qg
ID =1.7A,VDS = 16V,VGS =4.5V *1
Qgs
P-Channel
ID = -1.2A,VDS = -16V,VGS = -4.5V *1
Qgd
td(on)
tr
td(off)
N-Channel
VDD = 10V,ID = 1.7A,RG = 6.0
RD = 5.7 *1
P-Channel
VDD = -10V,ID = -1.2A,RG = 6.0
RD = 8.3 1*1
tf
N-Channel
Ciss
VGS = 0V,VDS = 15V,f = 1.0MHz *1
Coss
Crss
P-Channel
VGS = 0V,VDS = -15V,f = 1.0MHz *1
IS
ISM
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
20
V
-20
0.041
0.012
V/
0.085 0.14
0.120 0.20
0.17 0.27
0.28 0.40
0.7
V
-0.7
2.6
S
1.3
1.0
-1.0
A
25
-25
100
nA
100
5.3 8.0
5.4 8.2
0.84 1.3
nC
0.96 1.4
2.2 3.3
2.4 3.6
5.7
9.1
24
35
ns
15
38
16
43
260
240
130
pF
130
61
64
1.25
-1.25
A
19
-14
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