N-Channel MOSFET. AO8822 Datasheet

AO8822 MOSFET. Datasheet pdf. Equivalent

Part AO8822
Description 20V Common-Drain Dual N-Channel MOSFET
Feature www.DataSheet4U.com AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Gen.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO8822 Datasheet



AO8822
AO8822
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8822 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its common-
drain configuration.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 3.6V)
RDS(ON) (at VGS = 2.5V)
ESD Protected
20V
7A
< 18m
< 22m
< 23m
< 27m
TSSOP8
Top View
Bottom View
D
Pin 1
D1/D2
S1
S1
G1
1
2
3
4
8 D1/D2
7 S2
6 S2
G
5 G2
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
7
6
30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
63
101
64
Max
83
130
83
G
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 6 : March 2011
www.aosmd.com
Page 1 of 5



AO8822
AO8822
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±10V
10 µA
BVGSO Gate-Source Breakdown Voltage
VDS=0V, IG=±250µA
±12
V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.5 0.8
1
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
A
VGS=10V, ID=7A
13 15 18
m
TJ=125°C
22 27
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6.6A
VGS=3.6V, ID=6A
15 17 22 m
16 18 23 m
VGS=2.5V, ID=5.5A
18 21 27 m
VGS=1.8V, ID=2A
28 m
gFS Forward Transconductance
VDS=5V, ID=7A
31 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
2A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V, VDS=10V, f=1MHz
520 650 780
140
60
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12 15 18 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=7A
5 6.7 8 nC
3.6 nC
Qgd Gate Drain Charge
3 nC
tD(on)
Turn-On DelayTime
0.25 us
tr Turn-On Rise Time
VGS=10V, VDS=10V, RL=1.5,
0.45
us
tD(off)
Turn-Off DelayTime
RGEN=3
11 us
tf Turn-Off Fall Time
4 us
trr Body Diode Reverse Recovery Time IF=7A, dI/dt=500A/µs
8 10 12 ns
Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=500A/µs
8 11 13.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6 : March 2010
www.aosmd.com
Page 2 of 5







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