2SC5827 Transistor Datasheet

2SC5827 Datasheet PDF, Equivalent


Part Number

2SC5827

Description

Silicon NPN Epitaxial Type Transistor

Manufacture

Hitachi Semiconductor

Total Page 10 Pages
PDF Download
Download 2SC5827 Datasheet PDF


2SC5827
2SC5827
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
Note: Marking is “WW–”.
www.DataSheet4U.com
3
1
2 1. Emitter
2. Base
3. Collector
ADE–208–1464(Z)
Rev.0
Nov. 2001

2SC5827
2SC5827
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
VEBO
IC
Pc
Tj
Tstg
Ratings
15
5.5
1.5
80
80
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25 °C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
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Symbol Min
V(BR)CBO
15
ICBO
ICEO
IEBO
hFE 100
Cob
fT 1.5
PG 10.5
Noise figure
NF
Typ
120
0.85
4.5
13.5
1.1
Max
0.1
1
0.1
150
1.15
1.8
Unit
V
µA
µA
µA
pF
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 15 V, IE = 0
VCE = 5.5 V, RBE = Infinite
VEB = 1.5 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA,
f = 900 MHz
V = 1 V, I = 5 mA,
CE C
f = 900 MHz
Rev.0, Nov. 2001, page 2 of 10


Features 2SC5827 Silicon NPN Epitaxial VHF/UHF wi de band amplifier ADE–208–1464(Z) Rev.0 Nov. 2001 Features • Super comp act package: MFPAK (1.4 x 0.8 x 0.59 mm ) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is WW–”. www.DataSheet4U.com 2SC5827 Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collect or to emitter voltage Emitter to base v oltage Collector current Collector powe r dissipation Junction temperature Stor age temperature Symbol VCBO VCEO VEBO I C Pc Tj Tstg Ratings 15 5.5 1.5 80 80 1 50 −55 to +150 Unit V V V mA mW °C C Electrical Characteristics (Ta = 25 °C) Item Collector to base breakdown voltage Collector cutoff current Collec tor cutoff current Emitter cutoff curre nt DC current transfer ratio Collector output capacitance Gain bandwidth produ ct Power gain www.DataSheet4U.com Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15    100  1.5 10.5  Typ     120 0.85 4.5 13.5 1.1 Max  0.1 1 0.1 150 1.15   1.8 Unit V.
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