Type Transistor. 2SC5827 Datasheet

2SC5827 Transistor. Datasheet pdf. Equivalent


Part 2SC5827
Description Silicon NPN Epitaxial Type Transistor
Feature 2SC5827 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE–208–1464(Z) Rev.0 Nov. 2001 Features .
Manufacture Hitachi Semiconductor
Datasheet
Download 2SC5827 Datasheet


2SC5827 Silicon NPN Epitaxial VHF/UHF wide band amplifier A 2SC5827 Datasheet
Recommendation Recommendation Datasheet 2SC5827 Datasheet




2SC5827
2SC5827
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
Note: Marking is “WW–”.
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3
1
2 1. Emitter
2. Base
3. Collector
ADE–208–1464(Z)
Rev.0
Nov. 2001



2SC5827
2SC5827
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
VEBO
IC
Pc
Tj
Tstg
Ratings
15
5.5
1.5
80
80
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25 °C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
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Symbol Min
V(BR)CBO
15
ICBO
ICEO
IEBO
hFE 100
Cob
fT 1.5
PG 10.5
Noise figure
NF
Typ
120
0.85
4.5
13.5
1.1
Max
0.1
1
0.1
150
1.15
1.8
Unit
V
µA
µA
µA
pF
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 15 V, IE = 0
VCE = 5.5 V, RBE = Infinite
VEB = 1.5 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA,
f = 900 MHz
V = 1 V, I = 5 mA,
CE C
f = 900 MHz
Rev.0, Nov. 2001, page 2 of 10







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