2SK3151
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005
Features
Low on-resistance RDS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source...
