DatasheetsPDF.com

N-Channel MOSFET. AO4892 Datasheet

DatasheetsPDF.com

N-Channel MOSFET. AO4892 Datasheet






AO4892 MOSFET. Datasheet pdf. Equivalent




AO4892 MOSFET. Datasheet pdf. Equivalent





Part

AO4892

Description

100V Dual N-Channel MOSFET



Feature


AO4892 100V Dual N-Channel MOSFET Gener al Description The AO4892 uses trench M OSFET technology that is uniquely optim ized to provide the most efficient high frequency switching performance. Both conduction and switching power losses a re minimized due to an extremely low co mbination of RDS(ON), Ciss and Coss. Th is device is ideal for boost converters and synchronous r.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO4892 Datasheet


Alpha & Omega Semiconductors AO4892

AO4892; ectifiers for consumer, telecom, industr ial power supplies and LED backlighting . Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4. 5V) 100V 4A < 68mΩ < 94mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View S1 G1 S2 G2 1 2 3 4 D1 To p View 8 7 6 5 D1 D1 D2 D2 G1 D2 G2 S1 S2 Pin1 Absolute Maximum Ratings T A=25° C unless otherwi.


Alpha & Omega Semiconductors AO4892

se noted Parameter Symbol Drain-Source V oltage VDS Gate-Source Voltage Continuo us Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L =0.1mH C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperat ure Range Thermal Characteristics Param eter Maximum Junction-to-Ambient A Maxi mum Junction-to-Ambient A D Maximum Jun ction-to-Lead TA=25°.


Alpha & Omega Semiconductors AO4892

C TA=70° C VGS ID IDM IAS EAS PD TJ, T STG Maximum 100 ±20 4 3 25 4 0.8 2.0 1.3 -55 to 150 Units V V A A mJ W ° C Symbol t ≤ 10s Steady-State Steady- State RθJA RθJL Typ 48 74 32 Max 6 2.5 90 40 Units ° C/W ° C/W ° C/W Rev 0: Nov. 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datash eet.in/ AO4892 Electrical Characteris tics (TJ=25° C unless otherw.

Part

AO4892

Description

100V Dual N-Channel MOSFET



Feature


AO4892 100V Dual N-Channel MOSFET Gener al Description The AO4892 uses trench M OSFET technology that is uniquely optim ized to provide the most efficient high frequency switching performance. Both conduction and switching power losses a re minimized due to an extremely low co mbination of RDS(ON), Ciss and Coss. Th is device is ideal for boost converters and synchronous r.
Manufacture

Alpha & Omega Semiconductors

Datasheet
Download AO4892 Datasheet




 AO4892
AO4892
100V Dual N-Channel MOSFET
General Description
Product Summary
The AO4892 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
100V
4A
< 68m
< 94m
Top View
SOIC-8
Bottom View
Top View
D1
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS
EAS
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
4
3
25
4
0.8
2.0
1.3
-55 to 150
G2
S1
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Nov. 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet.in/




 AO4892
AO4892
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4A
VGS=4.5V, ID=3A
Forward Transconductance
VDS=5V, ID=4A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
100
1.7
25
1
5
±100
2.35 2.8
56
104
74
12.5
0.78
68
126
94
1
2.5
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
415
32
3
0.7 1.4 2.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.5 12 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=4A
3 6 nC
1.5 nC
Qgd Gate Drain Charge
1.5 nC
tD(on)
Turn-On DelayTime
4 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=12.5,
2
ns
tD(off)
Turn-Off DelayTime
RGEN=3
15 ns
tf Turn-Off Fall Time
2 ns
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/µs
16 ns
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs
44 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Nov. 2012
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet.in/




 AO4892
AO4892
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
10V 6V
20 4.5V
15
10
3.5V
5
VGS=3.0V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
20
VDS=5V
15
10
5 125°C
25°C
0
1234
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
5
100
90
VGS=4.5V
80
70
60
50 VGS=10V
40
0 2 4 6 8 10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=10V
ID=4A
17
5
2
VGS=4.5V 10
ID=3A
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction18Temperature
(Note E)
180
ID=4A
160
140
120
100 125°C
80
60
40 25°C
20
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Nov. 2012
www.aosmd.com
Page 3 of 6
Free Datasheet http://www.datasheet.in/






Recommended third-party AO4892 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)