2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS =0.026 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2929
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source ...