Power MOSFET. IRF820A Datasheet

IRF820A MOSFET. Datasheet pdf. Equivalent

IRF820A Datasheet
Recommendation IRF820A Datasheet
Part IRF820A
Description Power MOSFET
Feature IRF820A; Power MOSFET IRF820A, SiHF820A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC.
Manufacture Vishay
Datasheet
Download IRF820A Datasheet




Vishay IRF820A
Power MOSFET
IRF820A, SiHF820A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
500
VGS = 10 V
17
Qgs (nC)
4.3
Qgd (nC)
8.5
Configuration
Single
3.0
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half bridge
• Full bridge
TO-220AB
IRF820APbF
SiHF820A-E3
IRF820A
SiHF820A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12).
c. ISD 2.5 A, dI/dt 270 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
2.5
1.6
10
0.40
140
2.5
5.0
50
3.4
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF820A
IRF820A, SiHF820A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 Ab
500 -
-V
- 0.60 - V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25
μA
- - 250
- - 3.0 Ω
1.4 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V; VDS = 400 V, f = 1.0 MHz
VGS = 0 V; VDS = 0 V to 400 Vc
VGS = 10 V
ID = 2.5 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 2.5 A,
Rg = 21 Ω, RD = 97 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
340 -
53 -
2.7 -
pF
490
15
28
- 17
- 4.3 nC
- 8.5
8.1 -
12 -
ns
16 -
13 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Currenta
integral reverse
G
ISM p - n junction diode
S
- - 2.5
A
- - 10
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μsb
-
330 500 ns
Qrr - 760 1140 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF820A
IRF820A, SiHF820A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 VGS
Top 15 V
10 V
8.0 V
7.0 V
1
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
0.1
4.5 V
10-2
0.1
91057_01
20 µs Pulse Width
TJ = 25 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
10
TJ = 150 °C
1
TJ = 25 °C
0.1
10-2
4.0
91057_03
20 µs Pulse Width
VDS = 50 V
5.0 6.0
7.0 8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10 VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
1
5.0 V
Bottom 4.5 V
4.5 V
0.1
1
91057_02
20 µs Pulse Width
TJ = 150 °C
10 102
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 2.5 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91057_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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