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Power MOSFET. IRF820A Datasheet |
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Power MOSFET
IRF820A, SiHF820A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
500
VGS = 10 V
17
Qgs (nC)
4.3
Qgd (nC)
8.5
Configuration
Single
3.0
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half bridge
• Full bridge
TO-220AB
IRF820APbF
SiHF820A-E3
IRF820A
SiHF820A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12).
c. ISD ≤ 2.5 A, dI/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
2.5
1.6
10
0.40
140
2.5
5.0
50
3.4
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
IRF820A, SiHF820A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 Ab
500 -
-V
- 0.60 - V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25
μA
- - 250
- - 3.0 Ω
1.4 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V; VDS = 400 V, f = 1.0 MHz
VGS = 0 V; VDS = 0 V to 400 Vc
VGS = 10 V
ID = 2.5 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 2.5 A,
Rg = 21 Ω, RD = 97 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
340 -
53 -
2.7 -
pF
490
15
28
- 17
- 4.3 nC
- 8.5
8.1 -
12 -
ns
16 -
13 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Currenta
integral reverse
G
ISM p - n junction diode
S
- - 2.5
A
- - 10
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μsb
-
330 500 ns
Qrr - 760 1140 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
IRF820A, SiHF820A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 VGS
Top 15 V
10 V
8.0 V
7.0 V
1
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
0.1
4.5 V
10-2
0.1
91057_01
20 µs Pulse Width
TJ = 25 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
10
TJ = 150 °C
1
TJ = 25 °C
0.1
10-2
4.0
91057_03
20 µs Pulse Width
VDS = 50 V
5.0 6.0
7.0 8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10 VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
1
5.0 V
Bottom 4.5 V
4.5 V
0.1
1
91057_02
20 µs Pulse Width
TJ = 150 °C
10 102
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 2.5 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91057_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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