N-channel MOSFET. 2N7002K Datasheet

2N7002K MOSFET. Datasheet pdf. Equivalent

2N7002K Datasheet
Recommendation 2N7002K Datasheet
Part 2N7002K
Description N-channel MOSFET
Feature 2N7002K; 2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: .
Manufacture AUK
Datasheet
Download 2N7002K Datasheet




AUK 2N7002K
2N7002K
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 1000V (HBM)
Low On-Resistance: RDS(on) < 3@ VGS = 10V
High power and current handling capability
Very fast switching
RoHS compliant device
Applications
High speed line driver
SOT-23
Ordering Information
Part Number
Marking Code
Package
Packaging
2N7002K
7K2
SOT-23
Tape & Reel
Marking Information
7K2
7K2 = Specific Device Code
= Year & Week Code Marking
Absolute Maximum Ratings (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Drain-Source voltage
Gate-Source voltage
Maximum drain current (Note 1)
Pulsed drain current (Note 1)
Power dissipation (Note 2)
Operating junction temperature
Storage temperature range
Thermal resistance junction to ambient (Note 2)
VDS
VGS
ID
IDP
PD
Tj
Tstg
Rth(j-a)
Note 1) Limited only maximum junction temperature
Note 2) Device mounted on FR-4 board with recommended pad layout.
Rev. date: 24-AUG-11
KSD-T5C097-000
Ratings
60
20
300
800
350
150
-55 ~ 150
350
Unit
V
V
mA
mA
mW
C
C
C/W
www.auk.co.kr
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AUK 2N7002K
Electrical Characteristics (Tamb=25, Unless otherwise specified)
Characteristic
Symbol
Test Condition
Drian-Source breakdown voltage
Gate-Source breakdown voltage
Gate-Threshold voltage
BVDSS
BVGSS
VGS(th)
ID=250A, VGS=0
IG=250A, VDS=0
ID=250uA, VDS=VGS
Zero Gate voltage drain current
IDSS VDS=60V, VGS=0
Gate-body leakage
Drain-Source on-resistance (Note 3)
Forward trans-conductance (Note 3)
IGSS
RDS(ON)
gfs
VGS=5V, VDS=0V
VGS=10V, VDS=0V
VGS=20V, VDS=0V
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS=10V, ID=0.2A
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on delay time (Note 3, 4)
Rise time (Note 3, 4)
Turn-off delay time (Note 3, 4)
Fall time (Note 3, 4)
Total gate charge (Note 3, 4)
Gate-Source charge (Note 3, 4)
Gate-Drain charge (Note 3, 4)
Diode forward voltage (Note 3)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=25V, VGS=0,
f=1MHz
VDD=30V, ID=0.2A,
VGS=10V, RG=10
VDS=10V, ID=0.25A,
VGS=4.5V
VGS=0V, IS=0.2A
Note 3) Pulse test: Pulse width300us, Duty cycle2%
Note 4) Essentially independent of operating temperature typical characteristics.
2N7002K
Min. Typ. Max. Unit
60
±20
1
-
-
-
-
0.08
-
-
-
-
-
--
-
-
-
-
-
--
--
- 2.5
-1
- 100
150
10
-3
- 3.5
--
30 50
7-
4-
2-
15 -
8-
11 -
0.6 0.8
0.2 -
0.2 -
- 1.3
V
V
V
A
nA
nA
A
S
pF
ns
nC
V
Rev. date: 24-AUG-11
KSD-T5C097-000
www.auk.co.kr
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AUK 2N7002K
Electrical Characteristics Curves
Fig. 1 ID - VDS
Fig. 2 ID – VGS
2N7002K
Fig. 3 RDS(ON) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
Rev. date: 24-AUG-11
KSD-T5C097-000
www.auk.co.kr
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