K2140 Datasheet: N-CHANNEL POWER MOS FET





K2140 N-CHANNEL POWER MOS FET Datasheet

Part Number K2140
Description N-CHANNEL POWER MOS FET
Manufacture NEC
Total Page 6 Pages
PDF Download Download K2140 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 SK2140, 2SK2140-Z SWITCHING N-CHANNEL P OWER MOS FET INDUSTRIAL USE DESCRIPTIO N The 2SK2140, 2SK2140-Z is N-channel P ower MOS Field Effect Transistor design ed for high voltage switching applicati ons. FEATURES • Low On-state Resista nce RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Rat ings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 0 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±7.0 A Drain Current (pulse)* ID(pulse) 28 A Total Power Dissipation (Tc = 2 5 ˚C) PT1 75 W Total Power Dissipat ion (TA = 25 ˚C) PT2 1.5 W Storage Temperature Tstg –55 to +150 ˚C Ch annel Temperature Tch 150 ˚C Single Avalanche Current** IAS 7.0 A Single Avalanche Energy** EAS 16.3 mJ * PW 10 µs, Duty Cycle ≤ 1 % ** Start ing Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 10.0 1.3 ± 0.

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2140, 2SK2140-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES
Low On-state Resistance
RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 3.5 A)
Low Ciss Ciss = 930 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse) ±28
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Storage Temperature
Tstg –55 to +150 ˚C
Channel Temperature
Tch 150 ˚C
Single Avalanche Current**
IAS 7.0 A
Single Avalanche Energy**
EAS 16.3 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2
10.0
1.3 ± 0.2
4
1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1
2.54
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
1.3 ± 0.2
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
(0.5(0R.)8R)
0.5 ± 0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Source
Document No. TC-2513
(O. D. No. TC-8072)
Date Published February 1995 P
Printed in Japan
© 1995

                 






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