2SC5195. C5195 Datasheet

C5195 2SC5195. Datasheet pdf. Equivalent

Part C5195
Description 2SC5195
Feature DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST.
Manufacture NEC
Datasheet
Download C5195 Datasheet



C5195
DATA SHEET
SILICON TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
IC = 100 mA
• Supercompact Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
2SC5195
2SC5195-T1
In-bulk products
(50 pcs.)
Taped products
(3 Kpcs/Reel)
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of
the tape.
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
9
6
2
100
125
150
–65 to +150
UNIT
V
V
V
mA
mW
˚C
˚C
PACKAGE DRAWINGS
(Unit: mm)
1.6±0.1
0.8±0.1
2
3
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10398EJ2V0DS00 (2nd edition)
(Previous No. TD-2488)
Date Published August 1995 P
Printed in Japan
© 1994



C5195
2SC5195
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
Collector Cutoff Current
ICBO VCB = 5 V, IE = 0
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain
Insertion Power Gain (1)
IEBO
hFE
|S21e|2
|S21e|2
VEB = 1 V, IC = 0
VCE = 1 V, IC = 3 mANote 1
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
VCE = 3 V, IC = 20 mA, f = 2.0 GHz
Noise Figure (2)
NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Noise Figure (1)
NF VCE = 3 V, IC = 7 mA, f = 2.0 GHz
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Gain Bandwidth Product (1) fT VCE = 3 V, IC = 20 mA, f = 2.0 GHz
Collector Capacitance
Cre VCB = 1 V, IE = 0, f = 1.0 MHzNote 2
MIN.
80
3
4.5
TYP.
4
8
1.7
1.5
5
9.5
0.7
MAX.
100
100
160
2.5
0.8
UNIT
nA
nA
dB
dB
dB
dB
GHz
GHz
pF
Notes 1. Pulse Measurement: PW 350 µs, Duty cycle 2 %, Pulsed
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE Classification
Rank
Marking
hFE
FB
88
80 to 160
2





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