MOSFET
Description
SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controolled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (RGS 1 ) Gate-Source Voltage
Drain Current
Continuous Pulsed
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