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BU2527AW

Part Number	BU2527AW
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 26, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switch...
Datasheet	BU2527AW PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 8 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 ...

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