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IRFP257

Part Number	IRFP257
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Aug 8, 2016
Detailed Description	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Stat...
Datasheet	IRFP257 PDF File

Overview

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
17Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 275 V ±20 V ...

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