DatasheetsPDF.com

NTE2362

NTE
Part Number NTE2362
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 16, 2016
Detailed Description NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NT...
Datasheet PDF File NTE2362 PDF File

NTE2362
NTE2362

Overview
NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications.
The high gain of these devices makes it possible for them to be driven directly from integrated circuits.
Features: D Very Small–Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
60V Collector–Emitter Voltage, VCEO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
50V Emitter–Base Voltage, VEBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
5V Collector Current, IC Continuous .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
500mA Peak .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
800mA Collector Dissipation, PC .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
300mW Operating Junction Temperature Range, TJ .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Note 1.
For PNP device (NTE2362), voltage and current values are negative.
Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product ICBO IEBO hFE fT VCB = 40Vdc, IE = 0 VBE = 4Vdc VCE = 5V, IC = 10mA VCE = 10V, IC = 50m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)