Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, fast switching industrial
applications...
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