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BUW58

Part Number	BUW58
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 2, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min.) ·Low Collec...
Datasheet	BUW58 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 160V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max.
) @IC= 15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Rang...

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