Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
BUW72
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V(Max.) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in clocked voltage converters.
Absolute ma...
Inchange Semiconductor
BUW72 PDF File
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