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NPT2021

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GaN Wideband Transistor


Description
NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 2.5 GHz  48 V Operation  16.5 dB Gain at 2.5 GHz  55 % Drain Efficiency at 2.5 GHz  100 % RF Tested  TO-272 Package  RoHS* Compliant and 260°C reflow compatible Description The NPT2021 ...



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NPT2021

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