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MJD112T4

Part Number	MJD112T4
Manufacturer	STMicroelectronics
Description	Complementary power Darlington transistors
Published	Oct 24, 2016
Detailed Description	MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic...
Datasheet	MJD112T4 PDF File

Overview

MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
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TAB 3 1 TO-252 (DPAK) Figure 1.
Internal schematic diagram R1 typ.
= 15 kΩ R2 typ.
= 100 Ω Table 1.
Device summary Order codes Marking MJD112T4 MJD112 MJD117T4 MJD117 January 2010 Polarity NPN PNP Doc ID 3540 Rev 3 Package DPAK DPAK Packaging Tape and reel Tape and reel 1/10 www.
st.
com 10 Absolute maximum ratings 1 Absolute maximum ratings Note: Table 2.
Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Ba...

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