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MJD32C

Part Number	MJD32C
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·...
Datasheet	MJD32C PDF File

Overview

isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·Complement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Coll...

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