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MJD117

Part Number	MJD117
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 8, 2016
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead for...
Datasheet	MJD117 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature -4 A 1.
75 W 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJD117 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless oth...

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