Silicon PNP Darlington Power Transistor
Description
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
MJD127
DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low spee...
Inchange Semiconductor
MJD127 PDF File
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