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BCV64

Part Number	BCV64
Manufacturer	NXP
Description	PNP general purpose double transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV64B PNP general purpose double transistor Product speciﬁcation Supersede...
Datasheet	BCV64 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV64B PNP general purpose double transistor Product speciﬁcation Supersedes data of 1997 Mar 10 1999 May 21 Philips Semiconductors Product speciﬁcation PNP general purpose double transistor FEATURES • Low current (max.
100 mA) • Low voltage (max.
30 and 6 V).
APPLICATIONS • General purpose switching and amplification • For use in Schmitt-trigger applications.
DESCRIPTION PNP double transistor in a SOT143B plastic package.
NPN complement: BCV63B.
MARKING TYPE NUMBER BCV64B MARKING CODE C96 Top view 1 2 MAM291 BCV64B PINNING PIN 1 2 3 4 collector TR1 emitter TR1 and TR2 base TR2 DESCRIPTION collector TR2 and base TR1 4 handbook, halfpage 3 2 1 TR1 TR2 3 4 Fig.
1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO TR1 TR2 VCEO collector-emitter voltage TR1 TR2 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1.
Transistor mounted on a printed-circuit board.
emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −30 −6 −6 −100 −200 −100 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −30 −6 V V MIN.
MAX.
UNIT 1999 May 21 2 Philips Semiconductors Product speciﬁcation PNP general purpose double transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on a printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO hFE PARAMETER collector cut-off current DC current gain TR1 TR2 VCEsat IC = −2 mA; VCE = −5 V 220 − − − IC = −10 mA; IB = −0.
5 mA; note 2 IC = −100 mA; IB = −5 mA; note 2 − IC = −2 mA; VCE = −5 V; note 3 IC = −10 mA; VCE = −5 V; note 3 IE = ie = 0; VCB = −10 V; f = 1 MHz − IC = −10 mA; VCE = −5 V; f = 100 MHz 100 4 − −600 − −850 −650...

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