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HM2301KR

P-Channel Enhancement Mode Power MOSFET

Description

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V ...

H&M Semiconductor

HM2301KR PDF File

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