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TGF2023-2-01

Part Number	TGF2023-2-01
Manufacturer	Qorvo
Description	SiC HEMT
Published	May 8, 2020
Detailed Description	TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a dis...
Datasheet	TGF2023-2-01 PDF File

Overview

TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.
25 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-2-01 is designed using Qorvo’s proven QGaN25 production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2023-2-01 typically provides 37.
7 dBm of saturated output power with power gain of 20.
7 dB at 3 GHz.
The maximum power added efficiency is 71.
6 % which makes the TGF2023-2-01 appropriate for high efficiency applications.
Lead-free and RoHS compliant Functional Block Diagram 2 1 Key Features  F...

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