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BDV67D

Part Number	BDV67D
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltag...
Datasheet	BDV67D PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.
0V(Max.
)@ IC= 10A ·Complement to Type BDV66D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications BDV67D ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 VCEO Collector-Emitter Voltage 150 UNIT V V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ ...

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