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BDV67B

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDV67/A/B/C DESCRIPTION ·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Complement to Type BDV66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and g...

INCHANGE

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